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Компоненты Описание
UPA610TA Просмотр технического описания (PDF) - NEC => Renesas Technology
Номер в каталоге
Компоненты Описание
производитель
UPA610TA
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
UPA610TA Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
µ
PA610TA
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-State
Resistance
Drain to Source On-State
Resistance
Drain to Source On-State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
MIN.
–1.0
20
TYP.
–1.4
23
MAX.
–1
+10
–1.7
60
UNIT
µ
A
µ
A
V
mS
Ω
TEST CONDITIONS
V
DS
= –30 V, V
GS
= 0
V
GS
= +20 V, V
DS
= 0
V
DS
= –3 V, I
D
= –10
µ
A
V
DS
= –3 V, I
D
= –10 mA
V
GS
= –2.5 V, I
D
= –1 mA
R
DS(on)2
11
23
Ω
V
GS
= –4 V, I
D
= –10 mA
R
DS(on)3
6
13
Ω
V
GS
= –10 V, I
D
= –10 mA
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
5
pF
V
DS
= –3 V
15
pF
V
GS
= 0
1.3
pF f = 1 MHz
140
ns
V
DD
= –3 V, I
D
= –10 mA
330
ns
V
GS(on)
= –4 V, R
G
= 10
Ω
220
ns
R
L
= 300
Ω
320
ns
2
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