FDS8433A Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS8433A Datasheet PDF : 5 Pages
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September 2000
FDS8433A
Single P-Channel 2.5V Specified MOSFET
General Description
This P-Channel enhancement mode power field effect
transistors is produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density processis especially tailored to minimize
on-state resistance and provide superior switching
performance.
Applications
• Load switch
• DC/DC converter
• Battery protection
Features
• -5 A, -20 V. RDS(on) = 0.047 Ω @ VGS = -4.5 V
RDS(on) = 0.070 Ω @ VGS = -2.5 V
• Fast switching speed.
• High density cell design for extremely low RDS(on).
• High power and current handling capability.
D
D
5
D
D
6
7
G
SO-8
SS
S
8
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
4
3
2
1
FDS8433A
-20
±8
-5
-50
2.5
1.2
1
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS8433A
FDS8433A
13’’
Tape Width
12mm
Quantity
2500 units
2000 Fairchild Semiconductor International
FDS8433A Rev. C
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