A61L6316S-10 Просмотр технического описания (PDF) - AMIC Technology

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A61L6316S-10

64K X 16 BIT HIGH SPEED CMOS SRAM

AMIC Technology 

A61L6316 Series

Features

n Center power pinout

n Supply voltage: -10: 3.3V+10%, -5%

-12, -15: 3.3V±10%

n Access times: 10/12/15 ns (max.)

n Current: Operating: -10: 230mA (max)

-12: 220mA (max.)

-15: 210mA (max.)

Standby: TTL: 25mA (max.)

CMOS: 12mA (max.)

64K X 16 BIT HIGH SPEED CMOS SRAM

n Full static operation, no clock or refreshing required

n All inputs and outputs are directly TTL-compatible

n Common I/O using three-state output

n Data retention voltage: 2V (min.)

n Available in 44-pin 400mil SOJ and 44-pin 400mil

TSOP(II) forward packages.

General Description

The A61L6316 is a high speed 1,048,576-bit static

random access memory organized as 65,536 words by

16 bits and operates on low power supply voltage from

3.0V to 3.6V. It is built using AMIC’s high performance

CMOS process.

Inputs and three-state outputs are TTL compatible and

allow for direct interfacing with common system bus

structures.

Pin Configuration

n SOJ / TSOP(II)

The chip enable input is provided for POWER-DOWN, to

disable the device. Two byte enable inputs and an output

enable input are included for easy interfacing.

Data retention is guaranteed at a power supply voltage

as low as 2V.

A0 1

A1 2

A2 3

A3 4

A4 5

CE 6

I/O0

7

I/O1

8

I/O2

9

I/O3

10

VCC 11

GND

12

I/O4

13

I/O5

14

I/O6

15

I/O7

16

WE 17

A5 18

A6 19

A7 20

A8 21

NC

22

44 A15

43 A14

42 A13

41 OE

40 HB

39 LB

38

I/O 15

37

I/O 14

36

I/O 13

35

I/O 12

34 GND

33 VCC

32

I/O 11

31

I/O 10

30

I/O9

29

I/O8

28 NC

27 A12

26 A11

25 A10

24 A9

23 NC

(May, 2001, Version 1.0)

1

AMIC Technology, Inc.

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