MJ21193 Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

MJ21193

Silicon Power Transistors

ON Semiconductor 

MJ21193, MJ21194

3.0

2.5

2.0

1.5

1.0

0.5

0

0.1

TJ = 25°C

IC/IB = 10

PNP MJ21193

TYPICAL CHARACTERISTICS

1.4

1.2

TJ = 25°C

1.0

IC/IB = 10

0.8

0.6

NPN MJ21194

VBE(sat)

VBE(sat)

0.4

VCE(sat)

1.0

10

100

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical Saturation Voltages

0.2

VCE(sat)

0

0.1

1.0

10

100

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Typical Saturation Voltages

PNP MJ21193

10

TJ = 25°C

1.0

VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

10

TJ = 25°C

NPN MJ21194

VCE = 20 V (SOLID)

1.0

VCE = 5 V (DASHED)

0.1

0.1

1.0

10

100

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Typical Base−Emitter Voltage

0.1

0.1

1.0

10

100

IC, COLLECTOR CURRENT (AMPS)

Figure 12. Typical Base−Emitter Voltage

100

There are two limitations on the power handling ability of

a transistor; average junction temperature and secondary

10

1 SEC

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

TC = 25°C

1.0

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 13 is based on TJ(pk) = 200°C; TC is vari-

able depending on conditions. At high case temperatures,

thermal limitations will reduce the power than can be handled

to values less than the limitations imposed by second break-

0.1

1.0

10

down.

100

1000

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area

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