MJ21194(2013) Просмотр технического описания (PDF) - ON Semiconductor
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MJ21194 Datasheet PDF : 6 Pages
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MJ21193 − PNP MJ21194 − NPN
3.0
2.5
2.0
1.5
1.0
0.5
0
0.1
TJ = 25°C
IC/IB = 10
PNP MJ21193
TYPICAL CHARACTERISTICS
1.4
1.2
TJ = 25°C
1.0
IC/IB = 10
0.8
0.6
NPN MJ21194
VBE(sat)
VBE(sat)
0.4
VCE(sat)
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
0.2
VCE(sat)
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Saturation Voltages
PNP MJ21193
10
TJ = 25°C
1.0
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
10
TJ = 25°C
NPN MJ21194
VCE = 20 V (SOLID)
1.0
VCE = 5 V (DASHED)
0.1
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
0.1
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Typical Base−Emitter Voltage
100
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
10
TC = 25°C
1.0
1 SEC
breakdown. Safe operating area curves indicate IC − VCE lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dissip-
ation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200°C; TC is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
0.1
1.0
10
to values less than the limitations imposed by second break-
down.
100
1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
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