NTE218 Просмотр технического описания (PDF) - NTE Electronics

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NTE218

Silicon PNP Transistor Audio Power Output

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise sepcified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Voltage

Transient Characteristics

hFE

VCE(sat)

VBE

VCE = 1V, IC = 100mA

VCE = 1V, IC = 250mA

VCE = 1V, IC = 500mA

VCE = 1V, IC = 1A

IC = 1A, IB = 125mA

VCE = 1V, IC = 250mA

40 –

–

30 – 100

20 –

–

10 –

–

–

– 0.6 V

–

– 1.0 V

Current Gain Bandwidth Product

Common Base Output Capacitance

Small–Signal Current Gain

fT

VCE = 1V, IC = 250mA, f = 1MHz

Cob VCE = 10V, IC = 0, f = 100kHz

hfe VCE = 10V, IC = 50mA, f = 1kHz

3

–

– MHz

–

– 100 pF

25 –

–

Note 1 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.

.485 (12.3)

Dia

.295 (7.5)

.062 (1.57)

.031 (0.78) Dia

.960 (24.3)

.580 (14.7)

.147 (3.75) Dia

(2 Places)

.145 (3.7) R Max

.360

(9.14)

Min

Base

.200

(5.08)

Collector/Case

Emitter

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