2N6076 Просмотр технического описания (PDF) - Fairchild Semiconductor
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2N6076 Datasheet PDF : 3 Pages
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DISCRETE POWER & SIGNAL
TECHNOLOGIES
2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR
ELECTRICAL CHARACTERISTICS Con’t (25 Degrees C Ambient Temperature unless otherwise stated)
SYM
CHARACTERISTICS
MIN MAX UNITS TEST CONDITIONS
Ccb
Output Capacitance
hfe
Small Signal Current Gain
1
13
pF
100
750
VCB = 10 V, f = 1 MHz
VCE = 10 V, IC=10 mA, f =1KHz
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150 degrees C.
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