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HA3-2605-5 Просмотр технического описания (PDF) - Intersil

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HA3-2605-5 Datasheet PDF : 7 Pages
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Die Characteristics
DIE DIMENSIONS:
69 mils x 56 mils x 19 mils
1750µm x 1420µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
HA-2600, HA-2605
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
TRANSISTOR COUNT:
140
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
+IN
HA-2600, HA-2605
-IN
BAL
V-
COMP
BAL
V+
OUT
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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