HA-2600(2006) Просмотр технического описания (PDF) - Intersil
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Компоненты Описание
производитель
HA-2600 Datasheet PDF : 9 Pages
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HA-2600
Schematic Diagram
COMPENSATION
BAL
R1
R2
R3
R4
1K
4.18K
1.56K 1.56K
BAL
Q1
Q39
Q3
Q2
Q40
Q38
Q4
Q37
C4
4pF
C3
16pF
V+
R5
R6
600
15
C2
9pF
Q60
Q61
Q41
Q42
Q59
Q5
+INPUT
Q8
Q13
Q16
Q6
Q7
Q11
Q9
Q10
Q12 Q17
Q18
Q15
Q30
Q29
Q31
Q28
Q26
Q27
R7
1.35
R19
2.5K
RP1
R8
1K
Q19
Q21
Q36
Q32
Q25
Q24
Q22
Q23
Q20
R9
4.5K
R10
2.0K
-INPUT
Q35
Q33
Q43
Q58
Q57
Q44
Q55 Q54
Q45
Q46
Q47
R11
4.0K
Q56
R18
30
OUT
Q53
R17
30
Q52
Q48
Q49
Q50
Q51
C1
16pF
R12
1.6K
R13
1.6K
R14
2.1K
R15
800
R16
15
V-
Typical Applications
5pF
SILICON PHOTO
DIODE
IP = 50µA
IB = 1nA
+
6V
R = 40kΩ
-
HA-2600
+
BAL
V+
FEATURES:
1. Constant cell voltage.
2. Minimum bias current error.
VO = -R(IP ± IB)
+2V
50pF (NOTE)
+6V
1µs
+5V
IN
MULTIPLEXER
DIGITAL CONTROL
DRIFT RATE = IBIAS
C
+15V
+
C
HA-2600
-
OUT
50pF (NOTE)
-15V
If C = 1000pF
Then DRIFT = 0.01V/µs (Max)
NOTE: A small load capacitance is recommended in all applications where practical to prevent possible high frequency oscillations resulting from
external wiring parasitics. Capacitance up to 100pF has negligible effect on the bandwidth or slew rate.
FIGURE 5. PHOTO CURRENT TO VOLTAGE CONVERTER
FIGURE 6. SAMPLE AND HOLD
4
FN2902.7
January 16, 2006
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