Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 3)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
IC = 10mA, IB = 0, Note 2
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 50V, IE = 0
VEB = 3V, IC = 0
30 – – V
60 – – V
5–– V
– – 30 nA
– – 30 nA
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small–Signal Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 10V, IC = 1mA
VCE = 10V, IC = 10mA
VCE = 10V, IC = 150mA
VCE = 10V, IC = 300mA
IC = 150mA, IB = 15mA
IC = 300mA, IB = 30mA
IC = 150mA, IB = 15mA
IC = 300mA, IB = 30mA
50 – –
75 – –
100 – –
20 – –
– – 0.4 V
– – 01.4 V
– – 1.3 V
– – 2.0 V
Current Gain–Bandwidth Product
fT
VCE = 20V, IC = 50mA, f = 100MHz, 200 350 – MHz
Note 3
Output Capacitance
NPN
PNP
Cobo
VCB = 10V, IE = 0, f = 1MHz
– 6.0 8.0 pF
– 4.5 8.0 pF
Input Capacitance
NPN
PNP
Cibo
VEB = 2V, IC = 0, f = 1MHz
– 20 30 pF
– 17 30 pF
Switching Characteristics
Turn–On Time
Turn–Off Time
ton
VCC = 30V, VEB = 0.5V, IC = 150mA, – 30 – ns
IB1 = 15mA
toff
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
– 225 – ns
Note 1. Voltage and current are negative for PNP transistors.
Note 2. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating.
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.