NTE477 Просмотр технического описания (PDF) - NTE Electronics

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NTE477

Silicon NPN Transistor RF Power Output

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Cutoff Current

Emitter Cutoff Current

DC Forward Current Gain

Output Power

ICBO

IEBO

hFE

PO

VOB = 15V, IE = 0

VEB = 3V, IO = 0

VCE = 10V, IC = 0.2A

VCC = 13.5V Pin = 6W,

f = 175MHz

– – 2.5 mA

– – 2 mA

10 60 180 –

40 45 – W

60 70 – %

.405

(10.3)

Min

.205 (5.18)

E

B

.215 (5.48)

.122 (3.1) Dia

.500 (12.7) Dia

.005 (0.15)

C

E

.155 (3.94)

.160

(4.06)

.725 (18.43)

.975 (24.78)

.270

(6.85)

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