Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Cutoff Current
ICEV VCE = 450V, VBE = –1.5V
–
– 0.5 mA
VCE = 450V, VBE = –1.5V, TC = +125°C –
– 5.0 mA
Emitter–Cutoff Current
IEBO VBE = –9V, IC = 0
–
– 1.0 mA
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, Note 1, Note 2
350 –
–
V
VCER(sus) IC = 200mA, RBE = 50Ω, Note 1, Note 2 375 –
–
V
Emitter–Base Voltage
VEBO IC = 0
9
–
–
V
DC Forward Current
hFE VCE = 1V, IC = 1.2A, Note 1
12 28 50
Base–Emitter Saturation Voltage VBE(sat) IC = 1.2A, IB = 200mA, Note 1
– 1.0 1.6 V
IC = 4A, IB = 800mA, Note 1
– 1.3 2.0 V
Collector–Emitter Saturation Voltage VCE(sat) IC = 1.2A, IB = 200mA, Note 1
– 0.15 0.5 V
IC = 4A, IB = 800mA, Note 1
– 0.5 3.0 V
Output Capacitance
Cobo VCB = 10V, f = 1MHz
–
– 150 pF
Small–Signal Forward Current
Transfer Ratio
|hfe| VCE = 10V, IC = 200mA, f = 1MHz
1
7
–
Second Breakdown Collector
Current
IS/b VCE = 50V, with Base forward biased, 0.9 –
–
A
Pulse duration (non–repetitive) = 1sec
Second Breakdown Energy
Delay Time
Rise Time
Storage Time
Fall Time
ES/b VBE = –4V, IC = 3A, with Base reverse 0.45 –
biased, RB = 50Ω, L = 100µH
– mj
td
VCC = 250V,
tr
IB1 = IB2 = 200mA,
IC = 1.2A
ts
– 0.02 – µs
– 0.3 0.75 µs
– 2.8 5.0 µs
tf
– 0.3 0.75 µs
Note 1. Pulsed: Pulse Duration ≤ 350µs, Duty Factor = 2%.
.062 (1.57)
.485 (12.3)
Dia
.295 (7.5)
.031 (0.78) Dia
.360 (9.14)
Min
.960 (24.3)
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.145 (3.7) R Max
.200
(5.08)
Collector/Case
Emitter