NTE384 Просмотр технического описания (PDF) - NTE Electronics

Номер в каталоге

Компоненты Описание

производитель

NTE384

Silicon NPN Transistor High Voltage Power Amp/Switch

NTE Electronics 

NTE384

Silicon NPN Transistor

High Voltage Power Amp/Switch

Description:

The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a

multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere character-

istic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform cur-

rent flow throughout the structure, which produces a high IS/b and a large safe–operation–area.

The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line.

The leakage current is specified at 450V; therefore the device can also be used in a series bridge

configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in

inverter applications.

Features:

D Maximum Safe–Area–of–Operation

D Low Saturation Voltages

D High Voltage Rating: VCER(sus) = 375V

D High Dissipation Rating: PT = 45W

Absolute Maximum Ratings:

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V

Collector–Emitter Sustaining Voltage

With Base Open, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V

With Reverse Bias (VBE) of –1.5V, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V

With External Base–Emitter Resistance (RBE) ≤ 50Ω, VCER(sus) . . . . . . . . . . . . . . . . . . . 375V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A

Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A

Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A

Transistor Dissipation (TC ≤ +25°C, VCE ≤ 40V), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W

Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Lead Temperature (During Soldering, 1/32 in. (0.8mm) from case, 10sec max), TL . . . . . . . +230°C

Thermal Resistance, Junction to Case (VCE = 20V, IC = 2.25A), RΘJC . . . . . . . . . . . . . . . . . 3.9°C/W

Share Link: