NTE190 Просмотр технического описания (PDF) - NTE Electronics

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NTE190

Silicon NPN Transistor High Voltage Amplifier

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

Base–Emitter ON Voltage

Collector–Emitter Saturation Voltage

Dynamic Characteristics

hFE

VBE(on)

VCE(sat)

IC = 10mA, VCE = 10V

IC = 200mA, VCE = 1V

IC = 200mA, IB = 20mA

40 – –

– – 1.0 V

– – 0.5 V

Current Gain–Bandwidth Product

fT IC = 50mA, VCE = 20V,

f = 20MHz

35 – – MHz

Output Capacitance

Input Capacitance

Cob VCB = 10V, IE = 0, f = 100kHz

– – 12 pF

Cib VBE = 0.5V, IC = 0, f = 100kHz – – 110 pF

Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.

.160

(4.06)

.100 (2.54)

.380 (9.65) Max

.050 (1.27)

.280 (7.25) Max

.128 (3.28) Dia

.218

(5.55)

.475

(12.0)

Min

EBC

.995

(25.3)

.100 (2.54)

.200 (5.08)

Collector Connected to Tab

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