NTE63 Просмотр технического описания (PDF) - NTE Electronics

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NTE63

Silicon NPN Transistor High Gain, Low Noise Amp

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics

DC Current Gain

Dynamic Characteristics

hFE IC = 30mA, VCE = 10V

30 – 200

Current Gain–Bandwidth Product

fT IC = 30mA, VCE = 10V,

f = 1GHz

– 5.0 – GHz

Collector–Base Capacitance

Functional Tests

Ccb VCB = 10V, IE = 0, f = 1MHz

– 0.6 1.0 pF

Noise Figure

NFMIN IC = 5mA, VCE = 10V, f = 1GHz – 2.5 – dB

IC = 5mA, VCE = 10V, f = 2GHz – 4.0 – dB

Power Gain at Optimum Noise Figure GNF IC = 5mA, VCE = 10V, f = 1GHz – 10 – dB

IC = 5mA, VCE = 10V, f = 2GHz – 6 – dB

Maximum Available Power Gain

(Note 1)

Gmax IC = 30mA, VCE = 10V, f = 1GHz – 12.5 – dB

IC = 30mA, VCE = 10V, f = 2GHz – 7.5 – dB

Note1.Gmax = |S21|2 / (I – |S11|2) (I – |S22|2)

.075 (1.9) Min

C

Seating Plane

.770

(19.5)

Max

E

E

.325

(8.27)

Max

B

.190

(4.83)

Dia

.036 (0.92)

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