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NTE63

Silicon NPN Transistor High Gain, Low Noise Amp

NTE Electronics 

NTE63

Silicon NPN Transistor

High Gain, Low Noise Amp

Description:

The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low

noise tuned and wiseband small–signal amplifiers and applications requiring fast switching times.

Features:

D High Current Gain–Bandwidth Product: fT = 5GHz Typ @ f = 1GHz

D High Power Gain: Gpe = 12.5dB Min @ f = 1GHz

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA

Total Device Dissipation (TL = +50°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW

Derate Above 50°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Thermal Resistance, Junction–to–Lead, RthJL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Breakdown Voltage

Collector–Base Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

V(BR)CEO IC = 1mA, IB = 0

V(BR)CBO IC = 0.1mA, IE = 0

V(BR)EBO IE = 0.1mA, IC = 0

ICBO VCB = 15V, IE = 0

Min Typ Max Unit

12 – – V

20 – – V

2––V

– – 50 nA

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