HGTP2N120BN Просмотр технического описания (PDF) - Intersil
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HGTP2N120BN Datasheet PDF : 7 Pages
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HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Thermal Resistance Junction To Case
NOTES:
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 150oC
ICE = 2.3A
VCE = 0.8 BVCES
VGE = 15V
RG = 51Ω
L = 5mH
Test Circuit (Figure 18)
MIN TYP MAX UNITS
-
25
30
ns
-
11
15
ns
-
195
260
ns
-
160
200
ns
-
83
-
µJ
-
725
1000
µJ
-
280
380
µJ
-
-
1.2
oC/W
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
12
VGE = 15V
10
8
6
4
2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
14
TJ = 150oC, RG = 51Ω, VGE = 15V, L = 1mH
12
10
8
6
4
2
0
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TJ = 150oC, RG = 51Ω, L = 5mH, VCE = 960V
TC = 75oC, VGE = 15V, IDEAL DIODE
100
TC VGE
75oC 15V
50
75oC 12V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION TC VGE
(DUTY FACTOR = 50%)
10 RØJC = 1.2oC/W, SEE NOTES
111100ooCC
15V
12V
0.5
1.0
2.0
5.0
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
25
40
VCE = 840V, RG = 51Ω, TJ = 125oC
20
35
tSC
ISC
15
30
10
25
5
20
12
13
14
15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3
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