HGTP2N120BN9A Просмотр технического описания (PDF) - Intersil
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HGTP2N120BN9A Datasheet PDF : 7 Pages
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HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTP2N120BN,
HGTD2N120BNS
HGT1S2N120BNS
1200
12
5.6
20
±20
±30
12A at 1200V
104
0.83
18
-55 to 150
300
260
8
15
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. ICE = 3A, L = 4mH, TJ = 25oC.
3. VCE(PK) = 840V, TJ = 125oC, RG = 51Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 10mA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 125oC
TC = 150oC
IC = 2.3A,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 20µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 51Ω, VGE = 15V,
L = 400µH, VCE(PK) = 1200V
Gate to Emitter Plateau Voltage
VGEP
IC = 2.3A, VCE = 0.5 BVCES
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
IC = 2.3A,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = 2.3A
VCE = 0.8 BVCES
VGE = 15V
RG = 51Ω
L = 5mH
Test Circuit (Figure 18)
Turn-Off Energy (Note 5)
EOFF
MIN
1200
15
-
-
-
-
-
6.0
-
12
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
40
-
2.45
3.6
6.8
-
-
10.2
24
32
21
11
185
100
83
370
195
MAX
-
-
250
-
0.5
2.7
4.2
-
±250
-
UNITS
V
V
µA
µA
mA
V
V
V
nA
A
-
V
30
nC
39
nC
25
ns
15
ns
240
ns
130
ns
-
µJ
500
µJ
270
µJ
2
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