NTE2334 Просмотр технического описания (PDF) - NTE Electronics

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NTE2334

Silicon NPN Transistor Darlington Driver w/Internal Damper and Zener Diode

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Unclamped Inductive Load Energy

Turn–On Time

Storage Time

Fall Time

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

Es/b

ton

tstg

tf

IC = 2.5A, IB = 5mA

IC = 2.5A, IB = 5mA

IC = 5mA, IE = 0

IC = 50mA, RBE = ∞

L = 100mH, RBE = 100Ω

VCC = 20V, IC = 3A,

IB1 = –IB2 = 6mA

– 0.9 1.5 V

– – 2.0 V

50 60 70 V

50 60 70 V

50 – – mJ

– 0.6 – µs

– 4.0 – µs

– 1.5 – µs

.420 (10.67)

Max

.110 (2.79)

.147 (3.75)

C

Dia Max

B

.500

(12.7)

Max

E

.070 (1.78) Max

Base

.100 (2.54)

.250 (6.35)

Max

.500

(12.7)

Min

Emitter

Collector/Tab

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