NTE2639 Просмотр технического описания (PDF) - NTE Electronics

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NTE2639

Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, High Speed Switch

NTE Electronics 

Electrical Characteristics: (THS = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Isolation Limiting Value and Characteristic

Repetitive Peak Voltage from All Three

Visol R.H. ≤ 65%; Clean and Dustfree

–

Terminals to External Heatsink

Capacitance from T2 to External

Cisol f = 1MHz

–

Heatsink

Static Characteristics

Collector Cutoff Current

ICES VCE = 1700V, VBE = 0

–

VCE = 1700V, VBE = 0, TJ = +125°C –

Emitter Cutoff Current

IEBO VEB = 7.5V, IC = 0A

–

Emitter–Base Breakdown Voltage

V(BR)EBO IB = 1mA

7.5

Collector–Emitter Sustaining Voltage VCEO(sus) IB = 0A, IC = 100mA, L = 25mH

825

Collector–Emitter Saturation Voltage

VCE(sat) IC = 7A, IB = 1.75A

–

Base–Emitter Saturation Voltage

VBE(sat) IC = 7A, IB = 1.75A

–

DC Current Gain

hFE VCE = 5V, IC = 0.1A

–

VCE = 1V, IC = 7A

4.0

Dynamic Characteristics (Switching Times, 16kHz Line Deflection Circuit)

Turn–Off Storage Time

Turn–Off Fall Time

ts

IC(sat) = 7A, LC = 650µH, Cfb = 18nF, –

tf

VCC = 162V, IB(end) = 1.5A,

LB = 2µH, –VBB = 4V

–

Typ Max Unit

– 2500 V

22 – pF

– 1.0 mA

– 2.0 mA

– 1.0 mA

13.5 – V

–

–V

– 1.0 V

– 1.1 V

22 –

6.0 6.5

5.8 6.5 µs

0.6 0.8 µs

Note 2. Measured with half sine–wave voltage (curve tracer).

.630 (16.0) Max

.228 (5.8) Max

.118 (3.0)

.177

(4.5)

Isol

.885

(22.5)

Max

BCE

1.063

(27.0)

Max

.215 (5.45)

.712

(18.1)

Min

.215 (5.45)

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