BF998R,215 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF998R,215 Datasheet PDF : 15 Pages
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NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
Product specification
BF998; BF998R
handbook, h0alfpage
ΔGtr
(dB)
−10
MGE808
−20
−30
−40 IDSS =
max
typ
min
−50
0
2
4
6
8
10
Vagc (V)
VDD = 12 V; f = 200 MHz; Tamb = 25 C.
Fig.19 Automatic gain control characteristics
measured in circuit of Fig.17.
0
handbook, halfpage
ΔGtr
(dB)
−10
IDSS =
max
typ
min
−20
MGE807
−30
−40
−50
0
2
4
6
8
10
Vagc (V)
VDD = 12 V; f = 800 MHz; Tamb = 25 C.
Fig.20 Automatic gain control characteristics
measured in circuit of Fig.18.
1996 Aug 01
10
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