2SD1710 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SD1710

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1710

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0

VCEsat Collector-emitter saturation voltage IC=4A;IB=0.8 A

VBEsat

Base-emitter saturation voltage

IC=4A;IB=0.8 A

IEBO

Emitter cut-off current

VEB=4V; IC=0

ICBO

Collector cut-off current

ICES

Collector cut-off current

hFE

DC current gain

VCB=800V; IE=0

VCE=1500V; RBE=0

IC=0.5 A ; VCE=5V

MIN TYP. MAX UNIT

800

V

5.0

V

1.5

V

0.1

mA

10

µA

1.0

mA

10

40

2

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