NTE2349 Просмотр технического описания (PDF) - NTE Electronics

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NTE2349

Silicon Darlington Transistors High Current, General Purpose

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

hFE IC = 25A, VCE = 5V

IC = 50A, VCE = 5V

1000

400

– 18000

–

–

Collector–Emitter Saturation Voltage VCE(sat) IC = 25A, IB = 250mA

–

– 2.5 V

IC = 50A, IB = 500mA

–

– 3.5 V

Base–Emitter Saturation Voltage

VBE(sat) IC = 25A, IB = 200mA

IC = 50A, IB = 300mA

–

– 3.0 V

–

– 4.5 V

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Schematic Diagram

C

C

B

B

E

NPN

E

PNP

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

.061 (1.55) Max

Emitter

.215 (5.45)

.430

(10.92)

1.187

(30.16)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case

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