DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NTE570 Просмотр технического описания (PDF) - NTE Electronics

Номер в каталоге
Компоненты Описание
производитель
NTE570
NTE-Electronic
NTE Electronics NTE-Electronic
NTE570 Datasheet PDF : 1 Pages
1
NTE570
Silicon Controlled Avalanche Diode
Absolute Maximum Ratings:
Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V
Allowable Avalanche Current (Square Wave Single Pulse 100µs), IZSM . . . . . . . . . . . . . . . . . . . 1.0A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Avalanche Voltage
Reverse Current
Reverse Current (High Temperature)
Temperature Dependency of VZ
VZ
IR
IR(H)
J
IZ = 1mA Instantaneous
VR = 130V
VR = 130V, TA = +100°C
IZ = 1mA
Min Typ Max Unit
135 – 180 V
– – 10 µA
– – 50 µA
– 0.15 – V/°C
1.070
(27.2)
Min
.291
(7.4)
Max
.032 (0.83) Dia Max
.165 (4.2)
Dia Max
Color Band Denotes Cathode

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]