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NTE61

Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications

NTE Electronics 

NTE60 (NPN) & NTE61 (PNP)

Silicon Complementary Transistors

High Power Audio, Disk Head Positioner

for Linear Applications

Description:

The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type

package designed for high power audio, disk head positioners, and other linear applications.

Features:

D High Safe Operating Area: 250W @ 50V

D For Low Distortion Complementary Designs

D High DC Current Gain: hFE = 25 Min @ IC = 5A

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A

Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A

Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A

Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70°C/W

Lead Temperature (During Soldering, 1/16” from Case, 10sec Max), TL . . . . . . . . . . . . . . . . +265°C

Note 1. Matched complementary pairs are available upon request (NTE61MCP). Matched comple-

mentary pairs have their gain specification (hFE) matched to within 10% of each other.

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 2

140 – – V

Collector Cutoff Current

ICEX VCE = 140V, VBE(off) = 1.5V

– – 100 µA

VCE = 140V, VBE(off) = 1.5V, TC = +150°C –

–

2 mA

ICEO VCE = 140V, IB = 0

– – 250 µA

Emitter Cutoff Current

IEBO VEB = 5V, IC = 0

– – 100 µA

Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.

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