Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
ICES
IEBO
VCE = 80V, VBE = 0
VEB = 5V
–
– 10 µA
–
– 100 µA
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 1V, IC = 2A, TJ = +25°C
VCE = 1V, IC = 4A, TJ = +25°C
IC = 8A, IB = 400mA
IC = 8A, Ib = 800mA
60 –
–
40 –
–
–
– 1.0 V
–
– 1.5 V
Collector Capacitance
NTE377
NTE378
Ccb
VCB = 10V, ftest = 1MHz
– 130 – pF
– 230 – pF
Gain Bandwidth Product
NTE377
NTE378
fT
IC = 500mA, VCE = 10V, f = 20MHz – 50 – MHz
– 40 – MHz
Switching Times
Delay and Rise Time
NTE377
NTE378
td + tr
IC = 5A, IB1 = 500mA
– 300 – ns
– 135 – ns
Storage Time
Fall Time
NTE377
ts
IC = 5A, IB1 = IB2 = 500mA
tf
– 500 – ns
– 140 – ns
NTE378
– 100 – ns
.147 (3.75)
Dia Max
.420 (10.67)
Max
.110 (2.79)
.500 (12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250
(6.35)
Max
.500 (12.7)
Min
Emitter
Collector/Tab