NTE307 Просмотр технического описания (PDF) - NTE Electronics

Номер в каталоге

Компоненты Описание

производитель

NTE307

Silicon Complementary Transistors Audio Power Amplifier

NTE Electronics 

NTE300 (NPN) & NTE307 (PNP)

Silicon Complementary Transistors

Audio Power Amplifier

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A

Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Voltage

V(BR)CBO IC = 1mA, IE = 0

V(BR)EBO IC = 10mA, RBE = ∞

V(BR)EBO IE = 1mA, IC = 0

ICBO VCB = 25V, IE = 0

IEBO VEB = 5V, IC = 0

hFE VCE = 4V, IC = 500mA

VCE(sat) IC = 1A, IB = 50mA

VBE VCE = 4V, IC = 50mA

Min Typ Max Unit

50 – – V

40 – – V

5––V

– – 1 µA

– – 1 µA

55 – 300

––1V

– 0.7 – V

Share Link: