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NTE2363

NTE2363 (NPN) & NTE2364 (PNP) Silicon Complementary Transistors

NTE Electronics 

NTE2363 (NPN) & NTE2364 (PNP)

Silicon Complementary Transistors

High Current General Purpose Amp/Switch

Features:

D Low Saturation Voltage

D Large Current Capacity and Wide ASO

Applications:

D Power Supplies

D Relay Drivers

D Lamp Drivers

D Automotive Wiring

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A

Allowable Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Ambient Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Note 1 For PNP device (NTE2364), voltage and current values are negative.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain Bandwidth Product

ICBO

IEBO

hFE (1)

hFE (2)

fT

VCB = 50V, IE = 0

VEB = 4V, IC = 0

VCE = 2V, IC = 100mA

VCE = 2V, IC = 1.5A

VCE = 10V, IC = 50mA

Min Typ Max Unit

– – 0.1 µA

– – 0.1 µA

200 – 400

40 – –

– 150 – MHz

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