NTE210 Просмотр технического описания (PDF) - NTE Electronics

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NTE210

Silicon Complementary Transistors General Purpose Output & Driver

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 3)

DC Current Gain

hFE IC = 100mA, VCE = 2V

IC = 1A, VCE = 2V

120 – 360

10 –

–

Collector–Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA

–

– 1.0 V

Base–Emitter Saturation Voltage

Dynamic Characteristics

VBE(sat) IC = 500mA, IB = 50mA

–

– 1.5 V

Current–Gain Bandwidth Product

Collector–Base Capacitance

NTE210

fT

IC = 20mA, VCE = 10V, f = 20MHz 75

Ccb

VCB = 20V, IE = 0, f = 1MHz

–

– 375 MHz

– 12 pF

NTE211

–

– 18 pF

Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

.380 (9.56)

.180 (4.57)

C

.132 (3.35) Dia

.500

(12.7)

1.200

(30.48)

Ref

.300

(7.62)

.325

(9.52)

.070 (1.78) x 45°

Chamf

.050 (1.27)

.400

(10.16)

Min

E BC

.100 (2.54)

.100 (2.54)

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