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NTE2346

Silicon Complementary Transistors General Purpose Darlington, Power Amplifier

NTE Electronics 

NTE2345 (NPN) & NTE2346 (PNP)

Silicon Complementary Transistors

General Purpose Darlington, Power Amplifier

Description:

The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an

SOT–82 type package designed for use in audio output stages and general amplifier and switching

applications..

Features:

D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V

D Junction Temperature to +150°C

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A

Peak (tp ≤ 10ms, δ ≤ 0.1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA

Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W

Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08K/W

Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W

Electrical Characteristics: (TJ = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

ICBO

ICEO

IE = 0, VCBO = 120V

IE = 0, VCBO = 120V, TJ = +150°C

IB = 0, VCEO = 60V

Emitter Cutoff Current

IEBO IC = 0, VEBO = 5V

DC Current Gain

hFE IC = 500mA, VCEO = 3V, Note 1

IC = 3A, VCEO = 3V, Note 1

IC = 6A, VCEO = 3V, Note 1

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Min Typ Max Unit

–

– 0.2 mA

–

– 2mA mA

–

– 0.5 mA

–

–

5 mA

– 2700 –

750 –

–

– 400 –

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