NTE2342 Просмотр технического описания (PDF) - NTE Electronics

Номер в каталоге

Компоненты Описание

производитель

NTE2342

Silicon Complementary NPN transistor. Darlington Driver.

NTE Electronics 

NTE2341(NPN) & NTE2342 (PNP)

Silicon Complementary Transistors

Darlington Driver

Description:

The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a

TO92 type package designed for general purpose, low frequency applications and as relay drivers.

Absolute Maximum Ratings:

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

Total Power Dissipation, Ptot

TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW

TA = +25°C, Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 156K/W

Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W

Note 1. Mounted on a PC Board, max lead length 4mm, mounting pad for collector lead min 10mm

x 10mm.

Electrical Characteristics: (TJ = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector–EmitterBreakdown Voltage

Collector–BaseBreakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

V(BR)CEO IC = 50mA, IB = 0

V(BR)CBO IC = 100µA, IB = 0

V(BR)EBO IE = 100µA, IC = 0

ICEO VCE = 40V, IB = 0

ICBO VCB = 100V, IE = 0

IEBO VCE = 4V, IC = 0

hFE IC = 150mA, VCE = 10V

IC = 500mA, VCE = 10V

Min Typ Max Unit

80 – – V

100 – – V

5––V

– – 500 nA

– – 100 nA

– – 100 nA

1000 – –

2000 – –

Share Link: