MC-4516CD641ES Просмотр технического описания (PDF) - NEC => Renesas Technology
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MC-4516CD641ES Datasheet PDF : 16 Pages
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MC-4516CD641ES, 4516CD641PS
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
VCC
Voltage on input pin relative to GND
VT
Short circuit output current
IO
Power dissipation
PD
Operating ambient temperature
TA
Storage temperature
Tstg
–0.5 to +4.6
V
–0.5 to +4.6
V
50
mA
8
W
0 to +70
°C
–55 to +125
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Supply voltage
VCC
High level input voltage
VIH
Low level input voltage
VIL
Operating ambient temperature
TA
Condition
MIN.
3.0
2.0
–0.3
0
TYP. MAX. Unit
3.3
3.6
V
VCC + 0.3 V
+ 0.8
V
70
°C
Capacitance (TA = 25 °C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN. TYP. MAX. Unit
Input capacitance
CI1 A0 - A11, BA0(A13), BA1(A12), 30
/RAS, /CAS, /WE
CI2
CLK0, CLK1
23
60
pF
37
CI3
CKE0, CKE1
18
30
CI4
/CS0, /CS1
18
30
CI5 DQMB0 - DQMB7
7
14
Data input/output capacitance
CI/O DQ0 - DQ63
9
18
pF
Data Sheet M14014EJ5V0DS00
5
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