TZA3030HL Просмотр технического описания (PDF) - Philips Electronics
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TZA3030HL Datasheet PDF : 20 Pages
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Philips Semiconductors
SDH/SONET STM1/OC3 optical receiver
Objective specification
TZA3030
CHARACTERISTICS
For typical values Tamb = 25 °C and VCC = 5 V; minimum and maximum values are valid over the entire ambient
temperature range and process spread.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
VCC
supply voltage
ICCD
digital supply current
note 1
note 2
note 3
3
5
13
20
−
47
11
17
ICCA
Ptot
Tj
Tamb
analog supply current
total power dissipation
junction temperature
operating ambient
temperature
24
36
−
−
−40
−
−40
+25
Rtr
f−3dB(h)
small-signal transresistance measured differentially
of the receiver
PECL outputs
−
CML outputs
−
high frequency −3 dB point pin BWC left
−
unconnected; note 4
2 000
1 000
120
f−3dB(l)
low frequency −3 dB point
20
30
In(tot)
total integrated RMS noise
current over bandwidth
referenced to input;
Ci = 1.2 pF; note 5
∆f = 90 MHz
−
16
∆f = 120 MHz
−
tbf
∆f = 155 MHz
−
tbf
PSRR
power supply rejection ratio measured differentially;
note 6
∆Rtr/∆t
AGC loop constant
f = 100 kHz to 10 MHz −
0.5
f = 10 MHz to 100 MHz −
10
−
1
Input: IPhoto
Vbias(IPhoto) input bias voltage
Ii(IPhoto)(p-p) input current (peak-to-peak
value)
VCC = 5 V
VCC = 3.3 V
tbf
−2 000
−1 000
1 048
+1
+1
PECL outputs: OUTPECL and OUTQPECL
VOH
HIGH-level output voltage 50 Ω to VCC − 2 V
VCC − 1100 −
VOL
LOW-level output voltage
50 Ω to VCC − 2 V
VCC − 1840 −
VOO
output offset voltage
measured differentially −10
−
tr
rise time
20% to 80%
−
tbf
tf
fall time
80% to 20%
−
tbf
MAX.
5.5
28
−
24
51
525
+110
+85
UNIT
V
mA
mA
mA
mA
mW
°C
°C
−
kΩ
−
kΩ
−
MHz
40
kHz
−
nA
−
nA
−
nA
µA/V
µA/V
−
dB/ms
tbf
mV
+2 000
µA
+1000
µA
VCC − 900 mV
VCC − 1620 mV
+10
mV
tbf
ps
tbf
ps
1998 Aug 24
10
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