BTW69-1000 Просмотр технического описания (PDF) - STMicroelectronics
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BTW69-1000 Datasheet PDF : 5 Pages
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BTW 69 (N)
THERMAL RESISTANCES
Symbol
Rth (j-a) Junction to ambient
Rth (j-c) DC Junction to case for DC
Parameter
BTW 69
BTW 69 N
Value
50
0.9
0.8
Unit
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 40W (tp = 20 µs) IFGM = 8A (tp = 20 µs) VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
IGT
VGT
VGD
tgt
IL
IH
VTM
IDRM
IRRM
dV/dt
tq
VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
VD=VDRM IG = 200mA
dIG/dt = 1.5A/µs
IG= 1.2 IGT
IT= 500mA gate open
Tj=25°C
Tj=25°C
Tj= 125°C
Tj=25°C
Tj=25°C
Tj=25°C
BTW 69 ITM= 100A
BTW 69 N ITM= 110A
VDRM Rated
VRRM Rated
tp= 380µs
Tj=25°C
Tj=25°C
Tj= 125°C
Linear slope up to
VD=67%VDRM
gate open
VDRM≤ 800V Tj= 125°C
VDRM ≥ 1000V
VD=67%VDRM ITM= 110A VR= 75V
dITM/dt=30 A/µs dVD/dt= 20V/µs
Tj= 125°C
MAX
MAX
MIN
TYP
TYP
MAX
MAX
MAX
MIN
TYP
Value
Unit
BTW 69 BTW 69 N
80
mA
1.5
V
0.2
V
2
µs
50
mA
150
mA
1.9
2.0
V
0.02
mA
6
500
V/µs
250
100
µs
2/5
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