1N5818 Просмотр технического описания (PDF) - Philips Electronics

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Компоненты Описание

производитель

1N5818

Schottky barrier diodes

Philips Electronics 

Philips Semiconductors

Schottky barrier diodes

Product specification

1N5817; 1N5818; 1N5819

200

handbook, halfpage

Tj

(oC)

150

100

VR

50

MBG433

VRWM

δ = 0.2

VRWM

δ = 0.5

0

0

10

20

30 VR (V) 40

0.20

handbook, halfpage

PR

(W)

VRWM

VR δ = 0.5

0.15

VRWM

δ = 0.2

MBG436

0.10

0.05

0

0

10

20

30 VR (V) 40

Fig.10 1N5819. Maximum permissible junction

temperature as a function of reverse voltage;

Rth j-a = 100 K/W.

Fig.11 1N5819. Reverse power dissipation as a

function of reverse voltage (max. values);

Rth j-a = 100 K/W.

1996 May 03

8

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