1N5818 Просмотр технического описания (PDF) - Philips Electronics
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1N5818 Datasheet PDF : 9 Pages
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Philips Semiconductors
Schottky barrier diodes
Product specification
1N5817; 1N5818; 1N5819
handboo2k,0h0alfpage
Tj
(oC)
150
100
50
0
0
MBG434
VRWM
δ = 0.2
VR
VRWM
δ = 0.5
10
VR (V)
20
handboo0k.,2h0alfpage
PR
(W)
0.15
0.10
0.05
0
0
VRWM
VR δ = 0.5
MBG435
VRWM
δ = 0.2
10
VR (V)
20
Fig.6 1N5817. Maximum permissible junction
temperature as a function of reverse voltage;
Rth j-a = 100 K/W.
Fig.7 1N5817. Reverse power dissipation as a
function of reverse voltage (max. values);
Rth j-a = 100 K/W.
200
handbook, halfpage
Tj
(oC)
150
100
50
0
0
MBG432
VRWM
δ = 0.2
VR
VRWM
δ = 0.5
10
20 VR (V) 30
0.20
handbook, halfpage
PR
(W)
0.15
VRWM
VR δ = 0.5
VRWM
δ = 0.2
MBG437
0.10
0.05
0
0
10
20 VR (V) 30
Fig.8 1N5818. Maximum permissible junction
temperature as a function of reverse voltage;
Rth j-a = 100 K/W.
Fig.9 1N5818. Reverse power dissipation as a
function of reverse voltage (max. values);
Rth j-a = 100 K/W.
1996 May 03
7
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