IS61LP12836-166TQI Просмотр технического описания (PDF) - Integrated Silicon Solution

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IS61LP12836-166TQI

128K x 32, 128K x 36 SYNCHRONOUS PIPELINED STATIC RAM

Integrated Silicon Solution 

IS61LP12832

IS61LP12836

128K x 32, 128K x 36 SYNCHRONOUS

PIPELINED STATIC RAM

ISSI®

PRELIMINARY INFORMATION

SEPTEMBER 2001

FEATURES

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Linear burst sequence control using MODE input

• Three chip enables for simple depth expansion

and address pipelining

• Common data inputs and data outputs

• JEDEC 100-Pin TQFP and

119-pin PBGA package

• Single +3.3V, +10%, –5% power supply

• Power-down snooze mode

• 2.5V I/O supply voltage

• Industrial temperature available

DESCRIPTION

The ISSI IS61LP12832 and IS61LP12836 is a high-speed

synchronous static RAM designed to provide a burstable,

high-performance memory for high speed networking and

communication applications. It is organized as 131,072

words by 32 bits and 36 bits, fabricated with ISSI's

advanced CMOS technology. The device integrates a 2-bit

burst counter, high-speed SRAM core, and high-drive

capability outputs into a single monolithic circuit. All

synchronous inputs pass through registers controlled by

a positive-edge-triggered single clock input.

Write cycles are internally self-timed and are initiated by

the rising edge of the clock input. Write cycles can be from

one to four bytes wide as controlled by the write control

inputs.

Separate byte enables allow individual bytes to be written.

BW1 controls DQa, BW2 controls DQb, BW3 controls

DQc, BW4 controls DQd, conditioned by BWE being

LOW. A LOW on GW input would cause all bytes to be

written.

Bursts can be initiated with either ADSP (Address Status

Processor) or ADSC (Address Status Cache Controller)

input pins. Subsequent burst addresses can be generated

internally and controlled by the ADV (burst address

advance) input pin.

The mode pin is used to select the burst sequence order,

Linear burst is achieved when this pin is tied LOW.

Interleave burst is achieved when this pin is tied HIGH or

left floating.

FAST ACCESS TIME

Symbol

tKQ

tKC

Parameter

Clock Access Time

Cycle Time

Frequency

-200

-166

-133

Units

3.1

3.5

4

ns

5

6

7.5

ns

200

166

133

MHz

This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best

possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.

Integrated Silicon Solution, Inc. — 1-800-379-4774

1

PRELIMINARY INFORMATION Rev. 00B

09/25/01

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