HD155121F Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HD155121F

RF Transceiver IC for GSM and PCN Dual band cellular systems

Hitachi -> Renesas Electronics 

HD155121F

RF Transceiver IC for GSM and PCN Dual band cellular systems

ADE-207-265A (Z)

2nd Edition

May 1999

Description

The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most

of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

LNAs, two first mixers, a second mixer, a programmable gain amplifier, and an IQ demodulator for the

receiver, and an IQ modulator and offset PLL for the transmitter. Also, on chip are dividers for the phase

splitter. Moreover the HD155121F includes control circuits to implement power saving modes. These

functions can operate down to 2.7 V and are housed in a 48-pin LQFP SMD package.

Hence the HD155121F can form a small size transceiver handset for dual band by adding a dual PLL

frequency synthesizer IC, power amplifiers and some external components.

The HD155121F is fabricated using a 0.6 µm double-polysilicon Bi-CMOS process.

Functions

Receiver(Rx)

• Low Noise Amplifier (LNA) bias circuit

• First mixer

• IF amplifier and second mixer

• Programmable Gain Amplifier (PGA)

• IQ demodulator with 90 degree phase splitter

Transmitter(Tx)

• IQ modulator with 90 degree phase splitter

• Offset PLL

 Down converter

 Phase comparator

 TXVCO driver

Others

• IF dividers

• Power saving control circuit

• IFVCO

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