M68761 Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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M68761 Datasheet PDF : 3 Pages
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MITSUBISHI RF POWER MODULE
M68761
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
10
50
9
ηT
8
40
7
PO
6
5 VDD1=12.5V
4 VDD2=12.5V
VGG=3.4V
3 Pin=1mW
2 ZG=ZL=50 Ω
30
20
ρin
10
1
0
0
800 810 820 830 840 850 860 870
FREQUENCY f (MHz)
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
100.0
100.0
ηT
10.0
PO
10.0
1.0
0.1
0.01
0.10
f=820MHz 1.0
VDD1=12.5V
VDD2=12.5V
VGG=3.5V
ZG=ZL=50Ω
0.1
1.00
10.00
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
100.0
100.0
ηT
10.0
PO
10.0
1.0
0.1
0.01
0.10
f=851MHz 1.0
VDD1=12.5V
VDD2=12.5V
VGG=3.5V
ZG=ZL=50Ω
0.1
1.00
10.00
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
10
100
9
f=820MHz
VDD1=12.5V
PO
90
8 VDD2=12.5V
80
Pin=1mW
7 ZG=ZL=50 Ω
70
6
60
5
ηT
50
4
40
3
30
2
20
1
10
0
0
2.00 2.50
3.00 3.50 4.00
2.25
2.75
3.25 3.75
GATE SUPPLY VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
10
100
9
f=851MHz
VDD1=12.5V
90
8 VDD2=12.5V
Pin=1mW
7 ZG=ZL=50 Ω
PO
80
70
6
60
5
ηT
50
4
40
3
30
2
20
1
10
0
0
2.00 2.50
3.00
3.50 4.00
2.25
2.75
3.25 3.75
GATE SUPPLY VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
14
70
12
60
10
50
ηT
8
40
6
30
4
PO
f=820MHz 20
2
VGG=3.5V
Pin=1mW
10
ZG=ZL=50Ω
0
0
4 6 8 10 12 14 16
DRAIN SUPPLY VOLTAGE VDD (V)
Nov. ´97
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