5962F-0323601QXA Просмотр технического описания (PDF) - Aeroflex UTMC

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5962F-0323601QXA

128K x 32 SRAM

Aeroflex UTMC 

DATA RETENTION CHARACTERISTICS (Pre and Post-Radiation)*

(VDD2 = VDD2 (min), 1 Sec DR Pulse)

SYMBOL

PARAMETER

MINIMUM

VDR

VDD1 for data retention

1.0

IDDR 1

Data retention current

-40oC

-55oC

25oC

125oC

tEFR1,2

Chip deselect to data retention time

0

tR1,2

Operation recovery time

tAVAV

MAXIMUM

600

600

600

12

UNIT

V

µA

µA

µA

mA

ns

ns

Notes:

* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.

1. E1 = VDD2 or E2 = VSS all other inputs = VDD2 or VSS

2. VDD2 = 0 volts to VDD2 (max)

VDD1

VIN >0.7VDD2 CMOS

E2

E1

VIN <0.3VDD2 CMOS

1.7V

DATA RETENTION MODE

VDR > 1.0V

1.7V

tEFR

tR

VSS

VDD2

Figure 5. Low VDD Data Retention Waveform

188 ohms

1.5V

CMOS

VDD2-0.05V

0.0V

50pF

< 2ns

Notes:

1. 50pF including scope probe and test socket.

2. Measurement of data output occurs at the low to high or high to low transition mid-point

(i.e., CMOS input = VDD2/2).

Input Pulses

Figure 6. AC Test Loads and Input Waveforms

90%

< 2ns

10%

11

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