RB200-LF Просмотр технического описания (PDF) - Won-Top Electronics
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RB200-LF Datasheet PDF : 4 Pages
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WTE
POWER SEMICONDUCTORS
RB200 – RB2010 Pb
2.0A SINGLE-PHASE BRIDGE RECTIFIER
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
! Ideal for Printed Circuit Boards
!
Recognized File # E157705
A
B
+~~-
C
D
Mechanical Data
! Case: RB-20, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: As Marked on Body
! Weight: 1.1 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
E
~
+
G
-
G
~
RB-20
Dim
Min
Max
A
8.60
9.40
B
6.90
7.40
C
27.9
—
D
25.4
—
E
0.71
0.81
G
4.60
5.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol RB200 RB201 RB202 RB204 RB206 RB208 RB2010 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
VR
RMS Reverse Voltage
VR(RMS)
35
Average Rectified Output Current @TA = 50°C
(Note 1)
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage (per element)
@IF = 2.0A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
IRM
Operating Temperature Range
Tj
Storage Temperature Range
TSTG
100 200 400 600 800 1000 V
70
140 280 420 560 700
V
2.0
A
60
A
1.0
V
5.0
500
µA
-55 to +125
°C
-55 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
RB200 – RB2010
1 of 4
© 2006 Won-Top Electronics
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