W24L11Q-70L Просмотр технического описания (PDF) - Winbond

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производитель

W24L11Q-70L

128K ´ 8 CMOS STATIC RAM

Winbond 

Preliminary W24L11

DATA RETENTION CHARACTERISTICS

(TA (°C) = 0 to 70)

PARAMETER

SYM.

TEST CONDITIONS

MIN.

VDD for Data Retention

VDR CS1 ≥ VDD -0.2V or

2.0

CS2 ≤ 0.2V

Data Retention Current

IDDDR CS1 ≥ VDD -0.2V or

-

CS2 ≤ 0.2V, VDD = 3V

Chip Deselect to Data

Retention Time

TCDR See data retention waveform 0

Operation Recovery Time TR

TRC*

* Read Cycle Time

TYP.

-

-

-

-

MAX. UNIT

-

V

50 µA

-

nS

-

nS

DATA RETENTION WAVEFORM

VDD

CS1

CS2

0.9VDD

TCDR

VDR=> 2V

CS1=> VDD - 0.2V

0.9 VDD

TR

0V <= CS2 <= 0.2V

Publication Release Date: October 1999

-7-

Revision A1

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