TCM851 Просмотр технического описания (PDF) - TelCom Semiconductor Inc => Microchip

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TCM851

REGULATED GaAs FET BIAS SUPPLY

TelCom Semiconductor Inc => Microchip 

TCM850

TCM851

TCM852

TCM853

REGULATED GaAs FET BIAS SUPPLY

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage (VIN to GND) .................. – 0.3V to +10.5V

VNEGOUT to GND ...................................... – 10.5V to 0.3V

VIN to VNEGOUT ............................................................... – 0.3 to 21V

VOUT to GND** ........................................ VNEGOUT to 0.3V

SHDN or OSC (Pin 4) to GND ........ – 0.3V to (VIN + 0.3V)

Power Dissipation (TA < 70°C)

SOIC ...........................................................470mW

Operating Temperature Range

C Device .............................................. 0°C to 70°C

E Device ....................................... – 40°C to +85°C

Storage Temperature Range ................ – 65°C to +165°C

Lead Temperature (Soldering, 10 sec) ................. +300°C

*This is a stress ratings only and functional operation of the device at these

or any other conditions above those indicated in the operational sections of

the specifications is not implied. Exposure to Absolute Maximum Rating

Conditions for extended periods may affect device reliability.

**The output may be shorted to NEGOUT or GND if the package power

dissipation is not exceeded. Typical short circuit current to GND is 50mA.

ELECTRICAL CHARACTERISTICS: VIN between +5V and +10V; VOUT = – 4.1V; RL = Open Circuit; TA = TMIN to

TMAX unless otherwise noted. A 100kHz, 50% duty cycle square wave

between GND and VIN is applied to the OSC pin of the TCM852.

Symbol Parameter

Test Conditions

Min

Typ

Max Unit

VIN

VOUT

VFBSET

IQ

ISHUT

Supply Voltage

Output Voltage

Output Voltage Range

Set Voltage

Supply Current

Shutdown Supply Current

Note 1

TCM850-TCM852: VFB = 0V (Note 3)

TCM853: VCTRL = 4.1V

TCM850-852: No Load

TCM850/853: VIN = 10V, SHDN = 0V

TCM851: SHDN = 2V

5

—

10

V

– 4.3

– 4.1

– 3.9 V

– 4.2

—

–4

– 0.5 to – (VIN –1)

V

– 1.32

– 1.28 – 1.24 V

—

2

3

mA

—

0.5

—

µA

—

2

—

TCM852: OSC Low

—

0.5

—

VOUT Load Regulation

VOUT Ripple

TCM850-TCM852: VFB = 0V (Note 3)

—

4

8 mV/mA

TCM853: VCTRL = 4.1V

—

3

8

TCM850-TCM852

—

2

— mVp-p

TCM853

—

1

—

fOSC

Oscillator Frequency

VIH

Input High Voltage

VIL

Input Low Voltage

IIN

Input Current

CIN

Input Capacitance

TCM850-TCM853: TA = 25°C (Note 2) 80

Pin 4

2

Pin 4

—

Pin 4

—

Pin 4

—

100

120 kHz

—

—

V

—

0.5

V

—

±1

µA

10

—

pF

NOTES: 1. The supply voltage can drop to 4.5V, but the output is no longer guaranteed to sink 5mA at – 4.1V.

2. The TCM852 will operate with a 50kHz to 250kHz square wave of 40% to 60% duty cycle. For best performance, use an 80kHz to

120kHz square wave with 50% duty cycle.

3. IOUT = 0mA or 5mA. Reference Figures 3 and 5.

4-28

TELCOM SEMICONDUCTOR, INC.

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