TDSG1150(2004) Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
TDSG1150 Datasheet PDF : 8 Pages
| |||
TDSG / O / Y11..
Vishay Semiconductors
Parameter
Surge forward current per
segment or DP
Test condition
tp ≤ 10 µs (non repetitive)
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance LED
junction/ambient
Tamb ≤ 45°C
t ≤ 3 sec, 2mm below seating
plane
Part
TDSO1150
TDSO1160
TDSY1150
TDSG1150
TDSG1160
Symbol
IFSM
IFSM
IFSM
IFSM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VISHAY
Value
Unit
0.15
A
0.15
A
0.15
A
0.15
A
0.15
A
400
mW
100
°C
-40 to + 85
°C
-40 to + 85
°C
260
°C
140
K/W
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Orange red
TDSO1150/1160
Parameter
Test condition
Luminous intensity per segment IF = 10 mA
(digit average) 1)
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage per segment
or DP
Reverse voltage per segment
or DP
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 20 mA
IR = 10 µA
1) IVmin and IV groups are mean
Yellow
TDSY1150
Parameter
Test condition
Luminous intensity per segment IF = 10 mA
(digit average) 1)
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage per segment
or DP
Reverse voltage per segment
or DP
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 20 mA
IR = 10 µA
1) IVmin and IV groups are mean
Symbol
Min
Typ.
Max
Unit
IV
450
µcd
λd
612
625
nm
λp
630
nm
ϕ
±50
deg
VF
2
3
V
VR
6
15
V
Symbol
Min
Typ.
Max
Unit
IV
450
µcd
λd
581
594
nm
λp
585
nm
ϕ
±50
deg
VF
2.4
3
V
VR
6
15
V
www.vishay.com
2
Document Number 83124
Rev. 1.4, 31-Aug-04
Share Link: 