TS921IDT(2012) Просмотр технического описания (PDF) - STMicroelectronics
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TS921IDT Datasheet PDF : 16 Pages
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TS921
Electrical characteristics
Table 5.
Symbol
Electrical characteristics for VCC = 5 V, VDD = 0 V, Vicm = VCC/2, RL connected to VCC/2,
Tamb = 25 °C (unless otherwise specified)
Parameter
Conditions
Min. Typ. Max.
Unit
Vio Input offset voltage
ΔVio Input offset voltage drift
Iio Input offset current
Iib Input bias current
VOH High level output voltage
VOL Low level output voltage
Avd Large signal voltage gain
GBP
ICC
CMR
SVR
Io
SR
Pm
GM
Gain bandwidth product
Supply current
Common mode rejection ratio
Supply voltage rejection ratio
Output short-circuit current
Slew rate
Phase margin at unit gain
Gain margin
en Equivalent input noise voltage
at Tmin. ≤ Tamb ≤ Tmax
Vout = 1.5 V
Vout = 1.5 V
3
5
mV
2
μV/°C
1
30
nA
15
100
nA
RL = 600 Ω
RL = 32 Ω
RL = 600 Ω
RL = 32 Ω
4.85
4.4
V
120
300
mV
Vout = 2 Vpk-pk
RL = 600 Ω
RL = 32 Ω
RL = 600 Ω
35
V/mV
16
4
MHz
No load, Vout = VCC/2
1
1.5
mA
60
80
dB
VCC = 4.5 to 5.5 V
60
80
dB
50
80
mA
0.7
1.3
V/μs
RL = 600 Ω, CL =100 pF
RL = 600 Ω, CL =100 pF
68
Degrees
12
dB
f = 1 kHz
9
---n---V-----
Hz
THD Total harmonic distortion
Vout = 2 Vpk-pk, f = 1 kHz,
Av = 1, RL = 600 Ω
0.005
%
Doc ID 5560 Rev 4
5/16
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