MX043G Просмотр технического описания (PDF) - Microsemi Corporation
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производитель
MX043G
Microsemi Corporation
MX043G Datasheet PDF : 4 Pages
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MX043J
MX043G
Electrical Parameters @ 25°C (unless otherwise specified)
DESCRIPTION
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Static Drain-to-Source On-State Resistance (1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
MReecverhseaRneciocvearylTOimeu(Btolidny Deiode)
ShelFit™
SYMBOL
BVDSS
∆BVDSS/∆TJ
V GS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
V SD
trr
CONDITIONS
V GS = 0 V, ID = 1 mA
MIN TYP.
200
tbd
V DS = VGS, ID = 1 mA,
TJ = 25°C
1.5
TJ = 125°C
0.5
TJ = -55°C
-
V GS = ±20 VDC, VDS = 0
TJ = 25°C
TJ = 125°C
V DS =0.8•BVDSS
TJ = 25°C
V GS = 0 V
TJ = 125°C
V GS= 12V, ID= 28A
TJ = 25°C
ID= 25A
TJ = 125°C
V DS ≥ 10 V; ID = 50 A
26
V GS = 0 V, VDS = 25 V, f = 1 MHz
V GS = 12 V, VDS = 100 V,
ID = 44 A, RG = 2.35 Ω
0.043
-
32
4400
900
280
V GS = 12 V, VDS = 100V, ID = 44 A
IF = IS, VGS = 0 V
160
30
83
0.6
-
IF = 10 A, -di/dt = 100 A/µs, TJ =25 °C
MAX
4.0
-
5.0
±100
±200
25
250
0.050
0.093
40
95
100
25
180
38
93
1.8
560
UNIT
V
V / °C
V
V
V
nA
µA
µA
Ω
Ω
S
pF
ns
nC
V
ns
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