DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HCTS11MS Просмотр технического описания (PDF) - Intersil

Номер в каталоге
Компоненты Описание
производитель
HCTS11MS Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Specifications HCTS11MS
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OPEN
GROUND
1/2 VCC = 3V ± 0.5V
STATIC BURN-IN I TEST CONDITIONS (Note 1)
6, 8, 12
1, 2, 3, 4, 5, 7, 9, 10, 11,
-
13
STATIC BURN-IN II TEST CONDITIONS (Note 1)
6, 8, 12
7
-
DYNAMIC BURN-IN TEST CONDITIONS (Note 2)
-
7
6, 8, 12
VCC = 6V ± 0.5V
14
1, 2, 3, 4, 5, 9, 10,
11, 13, 14
14
NOTE:
1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in
2. Each pin except VCC and GND will have a resistor of 1KΩ ± 5% for dynamic burn-in
OSCILLATOR
50kHz
25kHz
-
-
-
-
1, 2, 3, 4, 5, 9, 10,
-
11, 13
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
6, 8, 12
7
1, 2, 3, 4, 5, 9, 10, 11, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
AC Timing Diagrams
VIH
VIL
VOH
VOL
VOH
VOL
VS
INPUT
TPLH
VS
TPHL
OUTPUT
TTLH
20%
80% 80%
OUTPUT
TTHL
20%
AC VOLTAGE LEVELS
PARAMETER
VCC
VIH
VS
VIL
GND
HCTS
4.50
3.00
1.30
0
0
UNITS
V
V
V
V
V
AC Load Circuit
DUT
CL
CL = 50pF
RL = 500
7-145
TEST
POINT
RL

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]