5962R9569001TCC Просмотр технического описания (PDF) - Intersil

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5962R9569001TCC

Radiation Hardened Low Noise Quad Operational Amplifier

Intersil 

Die Characteristics

DIE DIMENSIONS:

(2420µm x 2530µm x 483µm ±25.4µm)

95 x 99 x 19mils ±1mil

METALLIZATION:

Type: Al Si Cu

Thickness: 16.0kÅ ±2kÅ

SUBSTRATE POTENTIAL:

Unbiased (DI)

BACKSIDE FINISH:

Silicon

Metallization Mask Layout

+IN2

HS-5104ARH-T

PASSIVATION:

Type: Nitride (Si3N4) over Silox (SiO2)

Nitride Thickness: 3.5kÅ ±1.5kÅ

Silox Thickness: 12.0kÅ ±2kÅ

WORST CASE CURRENT DENSITY:

< 2.0e5 A/cm2

TRANSISTOR COUNT:

175

PROCESS:

Bipolar DI

HS-5104ARH-T

V+

+IN1

-IN2

-IN1

OUT2

OUT3

-IN3

+IN3

OUT1

OUT4

-IN4

V-

+IN4

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

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