5962F9961801QEC Просмотр технического описания (PDF) - Intersil
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5962F9961801QEC Datasheet PDF : 5 Pages
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HS-201HSRH, HS-201HSEH
Die Characteristics
DIE DIMENSIONS
2790µm x 4950µm (110 mils x 195 mils)
Thickness: 483µm ±25.4µm (19 mils ±1 mil)
INTERFACE MATERIALS
Glassivation
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8.0kÅ ±1.0kÅ
Metallization
Type: Ti/AlCu
Thickness: 16.0kÅ ± 2kÅ
Substrate
Rad Hard Silicon Gate, Dielectric Isolation
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<2.0 x 105 A/cm2
Transistor Count
328
Metallization Mask Layout
OUT4
IN4
GND
V-
IN1
OUT1
A4
A1
A3
A2
OUT3
IN3
V+
IN2
OUT2
3
FN4874.2
June 24, 2013
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