HS1-9008RH-8 Просмотр технического описания (PDF) - Intersil
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HS1-9008RH-8 Datasheet PDF : 4 Pages
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Die Characteristics
DIE DIMENSIONS:
180 mils x 197 mils x 21 ±1 mils
INTERFACE MATERIALS:
Glassivation:
Type: SiO2
Thickness: 8kÅ ±1kÅ
Top Metallization:
Metal 1 - Type: Moly/TiW
Thickness: 5.8kÅ ±10%
Metal 2- Type: Al/Si/Cu
Thickness: 10kÅ ±10%
Backside Finish:
Silicon
Metallization Mask Layout
HS-9008RH
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
VDD
ADDITIONAL INFORMATION:
Worst Case Current Density:
Metal 1 - Designs using the Intersil AVLSI-1RA process
take advantage of the superior current carrying
capabilities of Moly.TiW. The current density limit
established by Intersil Reliability is 5.0 x 105 A/cm2
Metal 2 - 1.63 x 105 A/cm2
Process:
AVLSI1RA
HS-9008RH
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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FN3279.4
March 10, 2005
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